Analysis of Electromigration in Dual-Damascene Interconnect Structures
نویسندگان
چکیده
منابع مشابه
Analysis of Electromigration in Dual-Damascene Interconnect Structures
We have analyzed the stress build-up and vacancy dynamics due to material transport caused by electromigration in dual-damascene interconnect structures. Our model incorporates all relevant driving forces for material transport with a complete integration of mechanical stress in connection with microstructural aspects. First, it is shown that the addition of redundant vias can be effective in i...
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Electromigration versus line width in the 0.12–10 lm range and the configuration of the via/line contact in dual damascene Cu has been investigated. There are two scenarios for width scaling impact on electromigration. One is the width < 1 lm region, in which the MTF shows a weak width dependence, except for the via-limited condition. The other is the width > 1 lm region, in which the MTF shows...
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We present a comprehensive physical model for the whole life cycles of electromigration induced voids. Special emphasis is put on explaining the void morphology and its impact on interconnect resistance. Investigations for common twoand three-dimensional interconnect structures are presented. Implications of the theoretical analysis and the simulation results for modern interconnect design are ...
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Electromigration is one of the most important reliability issues in semiconductor technology. Its complex character demands comprehensive physical modeling as basis for analysis. Simulation of electromigration induced interconnect failure focuses on the life-cycle of intrinsic voids, which consists of two distinct phases: void nucleation and void evolution. We present models for both phases as ...
متن کاملEffects of length scaling on electromigration in dual-damascene copper interconnects
The electromigration short-length effect in dual-damascene Cu interconnects has been investigated through experiments on lines of various lengths (L), being stressed at a variety of current densities (j), and using a technologically realistic three-level structure. This investigation represents a complete study of the short-length effect after a well-developed dual-damascene Cu process. Lifetim...
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ژورنال
عنوان ژورنال: Journal of Integrated Circuits and Systems
سال: 2009
ISSN: 1872-0234,1807-1953
DOI: 10.29292/jics.v4i2.300